ADVANCED GAN SEMICONDUCTOR

Thin film deposition and growth services

·Atomic layer deposition (ALD): Used for the growth of high - quality oxide and nitride thin films.

·Magnetron sputtering: Used for the physical vapor deposition of metal or compound thin films.

·Electron beam evaporation: Used for the evaporation and deposition of metals (such as Ti, Ni, Ag, Al, etc.).

·Plasma - enhanced chemical vapor deposition (PECVD): Used for the deposition of dielectric thin films such as SiO₂, SiN₃.

·Metal - organic chemical vapor deposition (MOCVD): Used for the epitaxial growth of compound semiconductors.

·Coating and developing: Supports wafers up to 8 inches in diameter or 6×6 - inch substrates.

·Photolithography (SUSS lithography machine): Supports projection - type photolithography and is suitable for wafers from 2 inches to 200mm in diameter.

·Electron beam lithography (EBL): Supports direct writing of high - resolution patterns ≤10nm.

·Plasma photoresist stripping (ashing): Used for photoresist removal.

Etching and cleaning services

·Reactive Ion Etching (RIE): Dry etching, suitable for dielectric materials.

·Inductively Coupled Plasma Etching (ICP): High - density plasma etching, suitable for SiO₂, SiN₃, etc.

·RCA Cleaning: Standard wafer cleaning process.

Water cleaning, organic ultrasonic cleaning: Suitable for 4/6 - inch wafers.

·Spin dryer: Wafer dehydration and baking.

Materials and surface analysis services

·Profilometer: Measurement of thin - film thickness and surface morphology.

·Thin - film stress tester: Measurement of substrate deformation caused by thin - film stress.

·Optical film thickness measuring instrument: Measurement of thin - film thickness through spectral reflection.

·3D optical profiler: Analysis of surface roughness and morphology.

·Atomic force microscope (AFM): Analysis of nanoscale surface morphology and physical properties.

·High - resolution X - ray diffractometer (HRXRD): Analysis of crystal structure, stress, and phase.

·Scanning near - field optical microscope and Raman system: Analysis of chemical composition, crystallinity, and morphology.

·Photoluminescence test (PL): Analysis of material energy bands and defects.

·Transmission electron microscope (TEM): Analysis of surface morphology and composition (Need to confirm availability).

Electrical and device testing services

·Fully automatic probe station and test system: Suitable for two·Semiconductor parameter test system: I-V, C-V, pulse test, etc.

·Power device static parameter test system: On-resistance, threshold voltage, breakdown voltage, etc.

·Dynamic parameter test system: Switching characteristics, reverse recovery, gate charge, etc.

·Thermal characteristic test system: Junction-to-case thermal resistance, heat capacity, thermal conductivity, etc.

·Variable temperature Hall test system: Measurement of carrier concentration, mobility, resistivity.

·Emission Microscope (EMMI): Defect location and leakage analysis.

Post - processing and packaging related services

·Wafer thinning: Suitable for 4/6-inch silicon carbide wafers.

·Laser dicing: High-precision wafer cutting.

·Marking machine: Laser marking on wafers.

·Rapid thermal annealer: Wafer annealing treatment.

·Graphite carrier disk baking: Used for post - processing of MOCVD.

Other special services

·Focused Ion Beam (FIB): Fixed-point cutting and cross - section analysis.

·Radio Frequency Glow Discharge Spectrometer: Element analysis and depth profiling.

·High - current ion implantation: Used for doping of SiC power devices.