Withstood various testsShowed excellent performance
Showed excellent performance in the epitaxial thickness test, warpage test,Surface morphology test,Contact Hall test. The film formation within the wafer is uniform and complete
Improve20%
Comparison with the linearity of international devices

Reduce20%
Comparison of radio - frequency losses with international materials
<0.55mm
Edge crack length
The performance indicators of GaN epitaxial material technology are excellent.
Excellent technology
Overcome difficulties
Comparison of material RF losses (0.4dB/mm@40GHz) Comparison of device linearity(-36.7dBc@26GHz)
Exceptional performance
The advanced radio - frequency materials and electronic materials have excellent performance
High - end and sophisticated equipmentEnsure production capacity
With multiple high - precision and advanced equipment, it can directly provide GaN epitaxial materials for microwave RF/power electronics applications in 2 - 8 inches.The annual production capacity of GaN epitaxial wafers is 3000 pieces.
Multiple patented works
Master intellectual property rights
Possess multiple core technologies, obtain multiple authorized patents, and publish multiple public papers and high - level monographs
email
suijiabin1993@gmail.com
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