Withstood various testsShowed excellent performance
Performed excellently in the epitaxial thickness test, warpage test,Surface morphology test,Contact Hall test, with uniform and complete film formation within the wafer
Improve20%
Comparison with the linearity of international devices
Reduce20%
Comparison with the RF loss of international materials
<0.55mm
Edge crack length
The performance indicators of GaN epitaxial material technology are excellent.
Excellent technology
Overcome difficult problems
Comparison of material radio frequency losses (0.4dB/mm@40GHz) Comparison of device linearity(-36.7dBc@26GHz)
Outstanding performance
The advanced radio - frequency materials and electronic materials have excellent performance
High - end and sophisticated equipmentEnsure production capacity
Possess multiple high - end and sophisticated devices, and can directly provide 2 - 8 inch GaN epitaxial materials for microwave radio frequency/power electronics applications.The annual production capacity of GaN epitaxial wafers is 3000 pieces.
Multiple patented works
Master intellectual property rights
Possess multiple core technologies, obtain multiple authorized patents, and publish multiple public papers and high - level monographs
友情链接：西安电子大学芜湖研究院 hpmc manufacturer
email
suijiabin1993@gmail.com
whatsapp
whatsapp
whatsapp